ma r 2009 qfet tm fqd20n06l / fqu20n06l ?200 9 fairchild semiconductor corporation rev. a1. ma r 2009 fqd20n06l / fqu20n06l 60v logic n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for low voltage applications such as automotive, dc/ dc converters, and high efficiency switching for power management in portable and battery operated products. features ? 17.2a, 60v, r ds(on) = 0.06 ? @ v gs = 10v ? low gate charge ( typical 9.5 nc) ? low crss ( typical 35 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? 150 o c maximum junction temperature rating ? low level gate drive requirements allowing direct operation form logic drivers absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter fqd20n06l / fqu20n06l units v dss drain-source voltage 60 v i d drain current - continuous (t c = 25c) 17.2 a - continuous (t c = 100c) 10.9 a i dm drain current - pulsed (note 1) 68.8 a v gss gate-source voltage 20 v e as single pulsed avalanche energy (note 2) 170 mj i ar avalanche current (note 1) 17.2 a e ar repetitive avalanche energy (note 1) 3.8 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d power dissipation (t a = 25c) * 2.5 w power dissipation (t c = 25c) 38 w - derate above 25c 0.30 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 3.28 c / w r ja thermal resistance, junction-to-ambient * -- 50 c / w r ja thermal resistance, junction-to-ambient -- 110 c / w * when mounted on the minimum pad size recommended (pcb mount) ! " ! ! ! " " " ! " ! ! ! " " " s d g i-pak fqu series d-pak fqd series g s d g s d
fqd20n06l / fqu20n06l rev. a1. ma r 2009 ?200 9 fairchild semiconductor corporation electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 670 h, i as = 17.2a, v dd = 25v, r g = 25 ?, starting t j = 25c 3. i sd 21a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 60 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.06 -- v/c i dss zero gate voltage drain current v ds = 60 v, v gs = 0 v -- -- 1 a v ds = 48 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 20 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -20 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1.0 -- 2.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 8.6 a v gs = 5 v, i d = 8.6 a -- -- 0.046 0.057 0.06 0.075 ? g fs forward transconductance v ds = 25 v, i d = 8.6 a -- 11 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 480 630 pf c oss output capacitance -- 175 230 pf c rss reverse transfer capacitance -- 35 45 pf switching characteristics t d(on) turn-on delay time v dd = 30 v, i d = 10.5 a, r g = 25 ? -- 10 30 ns t r turn-on rise time -- 165 340 ns t d(off) turn-off delay time -- 35 80 ns t f turn-off fall time -- 70 150 ns q g total gate charge v ds = 48 v, i d = 21 a, v gs = 5 v -- 9.5 13 nc q gs gate-source charge -- 2.5 -- nc q gd gate-drain charge -- 5.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 17.2 a i sm maximum pulsed drain-source diode forward current -- -- 68.8 a v sd drain-source diode forward voltage v gs = 0 v, i s = 17.2 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i f = 21 a, di f / dt = 100 a/ s -- 54 -- ns q rr reverse recovery charge -- 75 -- nc (note 4) (note 4, 5) (note 4, 5) (note 4)
fqd20n06l / fqu20n06l ?200 9 fairchild semiconductor corporation rev. a1. ma r 2009 048121620 0 2 4 6 8 10 12 v ds = 30v v ds = 48v note : i d = 21a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 102030405060 20 40 60 80 100 v gs = 10v v gs = 5v not e : t j = 25 r ds(on) [m ], drain-source on-resistance i d , drain current [a] 0246810 10 -1 10 0 10 1 150 25 -55 notes : 1. v ds = 25v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 v gs top : 10.0 v 8.0 v 6.0 v 5.0 v 4.5 v 4.0 v 3.5 v bottom : 3.0 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics typical characteristics
fqd20n06l / fqu20n06l ?200 9 fairchild semiconductor corporation rev. a1. ma r 2009 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1 . z jc (t) = 3.28 /w m a x. 2 . d u t y f a c t o r , d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) sin g le p u ls e d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 0 5 10 15 20 i d , drain current [a] t c , case temperature [ ] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 dc 10 ms 1 ms 100 s operation in this area is limit ed by r ds(on) not es : 1. t c = 25 o c 2. t j = 150 o c 3. si ngl e pul se i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 8.6 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 typical characteristics (continued)
fqd20n06l / fqu20n06l ?200 9 fairchild semiconductor corporation rev. a1. may 200 9 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 5v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 5v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 5v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 5v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p
fqd20n06l / fqu20n06l ?200 9 fairchild semiconductor corporation rev. a1. ma r 2009 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
mechanical dimensions d-pak dimensions in millimeters fqd20n06 l / fqu20n06l ? 200 9 f a i r c h i l d s e m i c o n duc t o r corporat i o n r ev . a 1. m a r 200 9
fqd20n06l / fqu20n06l ?200 9 fairchild semiconductor corporation rev. a1. ma r 2009 package dimensions (continued) ipak
rev. i39 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neit her does it convey any license under its pat ent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life su pport device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? truecurrent?* serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product developm ent. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy . fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as lo ss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fa irchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. fqd20n06 l / fqu20n06l ? 200 9 f a i r c h i l d s e m i c o n duc t o r corporat i o n r ev . a 1. m a r 200 9
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